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STW80NE06-10 N-CHANNEL 60V - 0.0085 - 80A TO-247 STripFETTM POWER MOSFET TYPE VDSS RDS(on) ID STW80NE06-10 60 V < 0.01 80 A(*) s TYPICAL RDS(on) = 0.0085 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION 3 2 s) 1 t( TO-247 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" d uc ro strip-based process. The resulting transistor shows extremely high packing density for low on-resis- INTERNAL SCHEMATIC DIAGRAM tance, rugged avalanche characteristics and less P te critical alignment steps therefore a remarkable man- ufacturing reproducibility. le so Ob APPLICATIONS s DC-DC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS - (s) s SOLENOID AND RELAY DRIVERS ct s AUTOMOTIVE ENVIRONMENT o du Pr ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit e let VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 k) 60 V VGS o Gate- source Voltage