LGE mjd112 free download

File name mjd112.pdf

MJD112(NPN) TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W RJC Thermal resistance, junction to case 6.25 /W RJA Thermal resistance, junction to Ambient 71.4 /W Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC =30mA,IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE=5mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 20