Rohm 2sar514r free download

File name 2sar514r.pdf

Midium Power Transistors (-80V / -0.7A) 2SAR514R Features Dimensions (Unit : mm) 1) Low saturation voltage, typically TSMT3 V CE (sat) = -0.4V (Max.) (I C / I B= -300mA / -15mA) 2) High speed switching (3) Structure PNP Silicon epitaxial planar transistor (1) (2) (1) Base Applications (2) Emitter (3) Collector Abbreviated symbol : MD Driver Packaging specifications Inner circuit Package TSMT3 (2) (3) Type Code TL Basic ordering unit (pieces) 3000 (1) Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit (1) Base Collector-base voltage VCBO -80 V (2) Emitter (2) (3) Collector (3) Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -6 V DC IC -0.7 A Collector current Pulsed ICP *1 -1.4 A PD *2 0.5 W Power dissipation PD *3 1.0 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate. www.rohm.com