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MUN5111 Series Bias Resistor Transistor COLLECTOR 3 3 PNP Silicon BASE R1 1 1 R2 2 2 SOT-323(SC-70) EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc Collector Current-Continuous IC 100 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1)TA=25 C PD 202 (1) mW Derate above 25 C 310 (2) 1.6 (1) mW/ C 2.5 (2) Thermal Resistance, Junction to Ambient (1) R JA 618 C/W 403 Junction and Storage, Temperature Range TJ,Tstg -55 to +150 C 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad l Device Marking and Resistor Values Device Marking R1(K) R2(K) Device Marking R1(K) R2(K) MUN5111 6A 10 10 MUN5131 6H 2.2 2.2 MUN5112 6B 22 22 MUN5132 6J 4.7 4.7 MUN5113 6C 47 47 MUN5133 6K 4.7 47 MUN5114 6D 10 47