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STW26NM50 N-channel 500 V, 0.10 30 A TO-247 , MDmeshTM Power MOSFET Features RDS(on) Type VDSS ID max STW26NM50 500 V < 0.12 30 A High dv/dt and avalanche capabilities Improved ESD capability 3 2 1 Low input capacitance and gate charge TO-247 Application Switching applications Description Figure 1. Internal schematic diagram MDmeshTM technology applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers low on- resistance, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order codes Marking Package Packaging STW26NM50 W26NM50 TO-247 Tube October 2009 Doc ID 8291 Rev 11 1/12 www.st.com 12 Contents STW26NM50 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 8291 Rev 11 STW26NM50 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source vol