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2ST5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Typical ft = 25 MHz Fully characterized at 125 oC Application 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2ST5949 2ST5949 TO-3 tray November 2008 Rev 4 1/8 www.st.com 8 Absolute maximum ratings 2ST5949 1 Absolute maximum ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 250 V VCEO Collector-emitter voltage (IB = 0) 250 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 17 A ICM Collector peak current (tP < 5 ms) 34 A PTOT Total dissipation at Tc = 25