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STB30NS15 N-CHANNEL 150V - 0.075 - 30A D2PAK LOW GATE CHARGE STripFETTM POWER MOSFET TYPE VDSS RDS(on) ID STB30NS15 150 V <0.1 30 A s TYPICAL RDS(on) = 0.075 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION 3 1 FOR THROUGH-HOLE VERSION CONTACT s) s D2PAK SALES OFFICE t( TO-263 (Suffix "T4") uc DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed d to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for INTERNAL SCHEMATIC DIAGRAMP ro Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. le te so APPLICATIONS Ob s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL - ct (s) o du Pr ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit e let VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain-gate Voltage (RGS = 20 k) 150 V VGS o Gate- source Voltage