Samsung 2n6520 free download

File name 2n6520.pdf

2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA & & Collector Dissipation PC 0.625 W Derate above 25 mW/ & 5 Junction Temperature TJ & 50 Storage Temperature T STG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage %Collector-Emitter Breakdown Voltage BVCBO } IC= -100 , IE=0 -350 V } BVCEO IC= -1mA, IB=0 -350 V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 V Collector Cut-off Current ICBO VCB= -250V, IE=0 -50 nA Emitter Cut-off Current VEB= -4V, IC=0 %DC Current Gain IEBO hFE VCE= -10V, IC= -1mA -50 nA 20 VCE= -10V, IC= -10mA 30 VCE= -10V, IC= -30mA 30