Wietron 2sb1188 free download

File name 2sb1188.pdf

2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25% ) C Rating Symbol Limits Unit Collector-Base Voltage VCBO -40 Vdc Collector-Emitter Voltage VCEO -32 Vdc Emitter-Base Voltage VEBO -5 Vdc IC -2 A(DC) Collector Current ICP -3 A (Pulse)* Collector Power Dissipation PC 0.5 W Junction Temperature, Storage Temperature T j, Tstg 150, -55 to +150 % C * Single pulse Pw = 100ms ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) C Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Ic=-50uA) BVCBO -40 - - V Collector-Emitter Breakdown Voltage (Ic=-1mA) BVCEO -32 - - V Emitter-Base Breakdown Voltage (I E =-50uA) BVEBO -5 - - V Collector Cutoff Current (VCB=-20) ICBO - - -1 uA Emitter Cutoff Current (VEB=-4V) IEBO - - -1 uA WEITRON http://www.weitron.com.tw 2SB1188 ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) (Countinued) C Parameter Symbol Min Typ Max Unit DC Current Gain (VCE=-3V, Ic=-0.5A) h FE 82 - 390 - Collector-Emitter Saturation Voltage (Ic=-2A, IB =-0.2A) VCE(sat) - - -0.8 V Transition Frequency (vCE=-5v, IE=0.5A, f=30MHz) fT 80 100