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STL52N25M5 N-channel 250 V, 0.055 , 28 A, PowerFLATTM (5x6) MDmeshTM V Power MOSFET Features RDS(on) Type VDSS ID(1) max. STL52N25M5 250 V < 0.065 28 A 1. This value is rated according Rthj-case. Amongst the best RDS(on)* area Very low profile package (1 mm max.) PowerFLATTM (5x6) Excellent switching performance High dv/dt capability 100% avalanche tested Application Switching applications Figure 1. Internal schematic diagram Description This device is N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STL52N25M5 52N25M5 PowerFLATTM (5x6) Tape and reel September 2010 Doc ID 17819 Rev 1 1/12 www.st.com 12 Contents STL52N25M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 17819 Rev 1 STL52N25M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage 25 V