Wietron wtm1766 free download

File name wtm1766.pdf

WTM1766 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5.0 V Collector Current -Continuous IC 2.0 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 A Emitter cut-off current IEBO VEB=4V, IC=0 1 A DC current gain hFE(1) VCE=3V, IC=500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.8 V Transition frequency fT VCE=5V, IC=50mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF CLASSIFICATION OF hFE(1) Rank P Q