Philips bf1100wr free download

File name bf1100wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1 s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3 g2 gate 2 Superior cross-modulation performance during AGC. 4 g1 gate 1 APPLICATIONS VHF and UHF applications such as television tuners and handbook, halfpage d professional communications equipment. 3 4 DESCRIPTION g2 Enhancement type field-effect transistor in a plastic g1 microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to 2 1 ensure good cross-modulation performance during AGC. Top view MAM192 s,b CAUTION The device is supplied in an antistatic package. The Marking code: MF. gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage 14 V ID drain current 30 mA Ptot total power dissipation 280 mW Tj operating junction temperature