| File information: | |
| File name: | 2n7000.pdf [preview 2n7000] |
| Size: | 239 kB |
| Extension: | |
| Mfg: | LGE |
| Model: | 2n7000 🔎 |
| Original: | 2n7000 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors LGE 2n7000.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 26-07-2020 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name 2n7000.pdf 2N7000 Mosfet (N-Channel) 1. SOURCE TO-92 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 200 mA PD Power Dissipation 350 mW RJA Thermal Resistance, junction to Ambient 357 /W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10A 60 V Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=1mA 0.8 Gate-body Leakage lGSS VDS=0 V, VGS= | ||

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