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STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAK PowerMeshTMII MOSFET TYPE VDSS RDS(on) ID STP4NC60 600V < 2.2 4.2A STP4NC60FP 600V < 2.2 4.2A STB4NC60-1 600V < 2.2 4.2A s TYPICAL RDS(on) = 1.8 3 2 s EXTREMELY HIGH dv/dt CAPABILITY 1 s 100% AVALANCHE TESTED TO-220 TO-220FP s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED 3 12 DESCRIPTION 2 I PAK The PowerMESHTMII is the evolution of the first (Tabless TO-220) generation of MESH OVERLAYTM. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)4NC60(-1) STP4NC60FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage