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STU8NC90Z STU8NC90ZI N-CHANNEL 900V - 1.1 - 7.6A Max220/I-Max220 Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STU8NC90Z 900 V < 1.38 7A STU9NC90ZI 900 V < 1.38 7A s TYPICAL RDS(on) = 1.1 s EXTREMELY HIGH dv/dt CAPABILITY s GATE-TO-SOURCE ZENER DIODES 3 s 100% AVALANCHE TESTED 2 1 s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED Max220 I-Max220 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STU8NC90Z STU8NC90ZI VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 k) 900 V VGS Gate- source Voltage