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STD20NE03L N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on ) ID ST D20NE03L 30 V < 0.020 20 A s TYPICAL RDS(on) = 0.016 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE A 100 oC s APPLICATION ORIENTED 3 CHARACTERIZATION 2 3 1 1 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature SizeTM " IPAK DPAK strip-based process. The resulting transistor TO-251 TO-252 shows extremely high packing density for low on- (Suffix "-1") (Suffix "T4") resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 30 V V DGR Drain- gate Voltage (RGS = 20 k) 30 V V GS Gate-source Voltage