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Model:ktc3202 🔎
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Descr: . Electronic Components Datasheets Active components Transistors LGE ktc3202.pdf
Group:Electronics > Components > Transistors
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KTC3202(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features General purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-BASE breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE= 1V, IC= 100mA 70 400 DC current gain hFE(2) VCE= 6V, IC= 400mA 25 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-Emitter Saturation Voltage VBE VCE=1V, IC= 100mA 1.0 V Transition frequency fT VCE= 6V, IC= 20mA 300 MHz Collector Output Capacitance Cob VCB= 6V, IE= 0,f=1 MHz 7.0 pF CLASSIFICATION OF hFE Rank O Y GR Range hFE(1) 70-140

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