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Descr: . Electronic Components Datasheets Active components Transistors ST stw11nk100z.pdf
Group:Electronics > Components > Transistors
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STW11NK100Z STW11NK100Z N-channel 1000V - 1.1 - 8.3A - TO-247 Zener - Protected SuperMESHTM PowerMOSFET General features VDSS Type RDS(on) ID Pw (@Tjmax) STW11NK100Z 1000 V < 1.38 8.3 A 230W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized TO-247 Very low intrinsic capacitances Very good manufacturing repeatibility Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established Internal schematic diagram strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Applications Switching application Order codes Part number Marking Package Packaging STW11NK100Z W11NK100Z TO-247 Tube July 2006 Rev 2 1/14 www.st.com 14 Contents STW11NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ... 7 3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW11NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1000 V VDGR Drain-gate voltage (RGS = 20K) 1000 V VGS Gate-source voltage

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