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Descr: . Electronic Components Datasheets Active components Transistors CET cen2301.pdf
Group:Electronics > Components > Transistors
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CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23-T package. G D S G SOT-23-T S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS

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