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SGSF344 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s HIGH VOLTAGE CAPABILITY s VERY HIGH SWITCHING SPEED s LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES s HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS 3 DESCRIPTION 2 1 The SGSF344 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter TO-220 structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Un it V CES Collector-Emitter Voltage (VBE = 0) 1200 V V CEO Collector-Emitter Voltage (IB = 0) 600 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 7 A I CM Collector Peak Current (tp < 5 ms) 12 A IB Base Current 5 A I BM Base Peak Current (tp < 5 ms) 8 A o P tot T otal Dissipation at Tc = 25 C 85 W o T s tg Storage Temperature -65 to 150 C o Tj Max. Operating Junction T emperature 150 C June 1997 1/6 SGSF344 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 1.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CES Collector Cut-off V CE = 1200 V 200