ST std845dn40 free download

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STD845DN40 Dual NPN high voltage transistors in a single package Preliminary data Features Low VCE(sat) Simplified circuit design Reduced component count 8 Fast switching speed 4 1 Applications Compact fluorescent lamp (CFL) 220 V mains DIP-8 Electronic ballast for fluorescent lighting Description Figure 1. Internal schematic diagram The device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in dual-island DIP- 8 package with separated terminals to provide a high degree of assembly flexibility. Table 1. Device summary Order code Marking Package Packaging STD845DN40 D845DN40 DIP-8 Tube April 2010 Doc ID 17211 Rev 2 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice. Electrical ratings STD845DN40 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms) V(BR)EBO V IC Collector current 4 A ICM Collector peak current (tP < 5 ms) 8 A IB Base current 2 A IBM Base peak current (tP < 5 ms) 4 A Total dissipation at Tamb = 25