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BUV27 SILICON NPN SWITCHING TRANSISTOR n VERY LOW SATURATION VOLTAGE n FAST TURN-OFF AND TURN-ON DESCRIPTION High speed transistor suited for low voltage applications. High frequency and efficiency converters switching regulators motor control. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V CBO Collector-base Voltage (I E = 0) 240 V V CEO Collector-Emitter Voltage (I B = 0) 120 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 12 A I CM Collector Peak Current 20 A IB Base Current 4 A I BM Base Peak Current 6 A P tot T otal Dissipation at T c < 25 oC 85 W o P tot T otal Dissipation at T c < 60 C 65 W o T s tg Storage Temperature -65 to +175 C o Tj Max. O perating Junction Temperature 175 C October 1995 1/4 BUV27 THERMAL DATA o R thj -ca se Thermal Resistance Junction-case Max 1.76 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit o I CER Collector Cut-off V CE = 240V T c = 125 C 3 mA Current (R BE = 50) o I CEX Collector Cut-off V CE = 240V VBE = -1.5V Tc = 125 C 1 mA Current