Various Si4800BDY free download

File name Si4800BDY.pdf

Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 30 0.030 @ VGS = 4.5 V 7 D SO-8 S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View S Ordering Information: Si4800BDY N-Channel MOSFET Si4800BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 TA = 25_C 9 6.5 Continuous Drain Current (TJ = 150_C)a, b ID TA = 70_C 7.0 5.0 A Pulsed Drain Current (10 ms Pulse Width) IDM 40 Continuous Source Current (Diode Conduction)a, b IS 2.3 TA = 25_C 2.5 1.3 Maximum Power Dissipationa, b PD W TA = 70_C 1.6 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Limits Parameter