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2SC2714 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA PC Collector Power Dissipation 100 mW Tj Junction Temperature 125 Tstg Storage Temperature -55-+125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 4 V Collector cut-off current ICBO VCB=18V,IE=0 0.5 A Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A DC current gain hFE VCE=6V,IC=1mA 40 200 Transition frequency fT VCE=6V,IC=1mA 550 MHz Reverse Transfer capacitance Cre VCB=6V,IE=0,f=1MHz 0.7 pF Noise figure NF VCE=6V,Ic=1mA,f=100MHZ 2.5 5 dB CLASSIFICATION OF hFE Rank R O Y Range 40-80 70-140 100-200 Marking QR QO QY 2SC2714 SOT-23 Transistor(NPN) Typical Characteristics 2SC2714 SOT-23 Transistor(NPN)