| File information: | |
| File name: | irfr220-01.pdf [preview irfr220-01] |
| Size: | 266 kB |
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| Mfg: | Philips |
| Model: | irfr220-01 🔎 irfr22001 |
| Original: | irfr220-01 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Philips irfr220-01.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 30-07-2020 |
| User: | Anonymous |
| Multipart: | No multipart |
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| Decompress result: | OK | |
| Extracted files: | 1 | |
File name irfr220-01.pdf IRFR220 N-channel enhancement mode field effect transistor Rev. 01 -- 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: IRFR220 in SOT428 (D-PAK). 2. Features s Fast switching s Low on-state resistance s Surface mount package. 3. Applications s Switched mode power supplies s DC to DC converters. 4. Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb 2 drain (d) [1] d 3 source (s) mb mounting base; g connected to drain (d) 2 s MBB076 1 3 Top view MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors IRFR220 N-channel enhancement mode field effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150 | ||

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