ST stgb7nb40lz free download

File name stgb7nb40lz.pdf

STGB7NB40LZ N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESHTM IGBT TYPE VCES VCE(sat) IC STGB7NB40LZ CLAMPED < 1.50 V 14 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP 3 1 s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s HIGH VOLTAGE CLAMPING FEATURE D2PAK t( s) uc DESCRIPTION Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding ro INTERNAL SCHEMATIC DIAGRAM P performances. The built in collector-gate zener exhibits a very precise active clamping while the le te so gate-emitter zener supplies an ESD protection. APPLICATIONS - Ob (s) s AUTOMOTIVE IGNITION ct du ABSOLUTE MAXIMUM RATINGS Symbol o Parameter Value Unit VCES VECR e Pr Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection CLAMPED 20 V V let VGE Gate-Emitter Voltage CLAMPED V IC o Collector Current (continuous) at 100