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STN1NC60 N-CHANNEL 600V - 12 - 0.3A - SOT-223 PowerMeshTMII MOSFET TYPE VDSS RDS(on) ID STN1NC60 600 V <15 0.3 A s TYPICAL RDS(on) = 12 2 (s) s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 ct s NEW HIGH VOLTAGE BENCHMARK 2 du ) s GATE CHARGE MINIMIZED 1 DESCRIPTION ro SOT-223 t(s TM P The PowerMESH II is the evolution of the first TM. generation of MESH OVERLAY The layout re- te uc finements introduced greatly improve the Ron*area le od figure of merit while keeping the device at the lead- o ing edge for what concerns swithing speed, gate bs e Pr charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM - O let APPLICATIONS s AC ADAPTORS AND BATTERY CHARGERS (s) bso s SWITH MODE POWER SUPPLIES (SMPS) ct du ) - O ro P t(s ol ete oduc bs e Pr ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit O let VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V b so VGS ID Gate- source Voltage Drain Current (continuos) at TC = 25