ST stb11nb40 free download

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STB11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE V DSS R DS(on) ID STB11NB40 400 V < 0.55 10.7 A s TYPICAL RDS(on) = 0.48 s EXTREMELY HIGH dV/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION 3 3 Using the latest high voltage MESH OVERLAYTM 12 1 process, SGS-Thomson has designed an advanced family of power MOSFETs with I2PAK D2PAK outstanding performances. The new patent TO-262 TO-263 pending strip layout coupled with the Company's (suffix "-1") (suffix "T4") proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 400 V V DGR Drain- gate Voltage (R GS = 20 k) 400 V V GS Gate-source Voltage