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Descr: . Electronic Components Datasheets Active components Transistors ST sts05dtp03.pdf
Group:Electronics > Components > Transistors
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STS05DTP03 Dual NPN-PNP complementary bipolar transistor Features High gain Low VCE(sat) 5 8 Simplified circuit design Reduced component count 4 1 Applications Push-pull or Totem-Pole configuration SO-8 MOSFET and IGBT gate driving Motor, relay and solenoid driving Figure 1. Internal schematic diagram Description The STS05DTP03 is a hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar technology. The STS05DTP03 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Table 1. Device summary Order code Marking Package Packaging STS05DTP03 S05DTP03 SO-8 Tape and reel March 2009 Rev 1 1/10 www.st.com 10 Electrical ratings STS05DTP03 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN PNP VCBO Collector-base voltage (IE = 0) 45 -45 V VCEO Collector-emitter voltage (IB = 0) 30 -30 V VEBO Emitter-base voltage (IC = 0) 6 -6 V IC Collector current 5 -5 A ICM Collector peak current (tP < 5 ms) 10 -10 A IB Base current 1 -1 A IBM Base peak current (tP < 1 ms) 2 -2 A PTOT Total dissipation at Tamb = 25

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