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File name irf530fp.pdf

IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on) ID IRF530FP 100 V < 0.16 10 A s TYPICAL RDS(on) = 0.12 s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s AVALANCHE RUGGED TECHNOLOGY s APPLICATION ORIENTED CHARACTERIZATION 3 2 s HIGH CURRENT CAPABILITY 1 s 175oC OPERATING TEMPERATURE TO-220FP APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 100 V VDGR Drain- gate Voltage (R GS = 20 k) 100 V V GS Gate-source Voltage