| File information: | |
| File name: | ksc2383.pdf [preview ksc2383] |
| Size: | 75 kB |
| Extension: | |
| Mfg: | Samsung |
| Model: | ksc2383 🔎 |
| Original: | ksc2383 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Samsung ksc2383.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 01-08-2020 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name ksc2383.pdf KSC2383 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECTION OUTPUT TO-92L ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A Collector Dissipation PC 900 W Junction Temperature TJ 150 Storage Temperature T STG -55 ~150 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Typ Max Unit } } Collector Cut-off Current ICBO VCB=150V, IE=0 1 Emitter Cut-off Current IEBO VEB=6V, IC=0 1 Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 160 V DC Current Gain hFE VCE=5V, IC=200mA 60 320 Collector-Emitter Saturation Voltage VCE (sat) IC=500mA, IB=50mA 1.5 V Base-Emitter On Voltage VBE (on) VCE=5V, IC=5mA 0.45 0.75 V Current Gain-Bandwidth Product fT VCE=5V, IC=200mA 20 100 MHz Output Capacitance COB VCB=10V, IE=0, f=1MHz 20 pF hFE CLASSIFICATION Classification R O Y hFE 60-120 100-200 160-320 KSC2383 NPN EPITAXIAL SILICON TRANSISTOR KSC2383 NPN EPITAXIAL SILICON TRANSISTOR | ||

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