Philips pbss5160ds free download

File name pbss5160ds.pdf

PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Rev. 03 -- 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -60 V IC collector current [1] - - -1 A ICM peak collector current single pulse; - - -2 A tp 1 ms RCEsat collector-emitter saturation IC = -1 A; [2] - 250 330 m resistance IB = -100 mA [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: tp 300