Samsung kse800 free download

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NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 { IC= -1.5 and -2.0A DC TO-126 MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO : KSE800/801 60 V : KSE802/803 80 V Collector-Emitter Voltage VCEO : KSE800/801 60 V : KSE802/803 80 V Emitter- Base Voltage VEBO 5 V 1. Emitter 2. Collector 3. Base Collector Current IC 4 A Base Current IB 0.1 A ) Collector Dissipation (T c=25 PC 40 W Junction Temperature TJ 150 Storage Temperature T STG -55 ~ 150 ELECTRICAL CHARACTERISTICS ) (T C=25 Characteristic Symbol Test Condition Min Max Unit Collector Emitter Breakdown Voltage BVCEO IC = 50mA, IB = 0 : KSE800/801 60 V : KSE802/803 80 V Collector Cutoff Current ICEO : KSE800/801 VCE = 60V, IB = 0 100 uA : KSE802/803 VCE = 80V, IB = 0 100 uA Collector Cutoff Current ICBO VCB = Rated BVCEO, IE = 0 100 uA VCB = Rated BVCEO, IE = 0 500 uA T C = 100 Emitter Cutoff Current IEBO VBE = 5V, Ic = 0 2 mA DC Current Gain : KSE800/802 hFE VCE = 3V, IC = 1.5A 750 : KSE801/803 VCE = 3V, IC = 2A 750 : ALL DEVICES