ST am2729 free download

File name am2729.pdf

AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN. WITH 6.5 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE BRANDING AM2729-110 2729-110 DESCRIPTION PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for S- Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metalliza- tion, and computerized automatic wire bonding techniques ensure high reliability and product con- sistency (including phase characteristics). The AM2729-110 is supplied in the BIGPACTM Her- metic M etal/Ceramic package with i nternal Input/Output matching circuitry, and is intended 1. Collector 3. Emitter for military and other high reliability applications. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25