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Descr: . Electronic Components Datasheets Active components Transistors ST stp11nk50z.pdf
Group:Electronics > Components > Transistors
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STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48 - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESHTMPower MOSFET TYPE VDSS RDS(on) ID Pw STB11NK50Z 500 V < 0.52 10 A 125 W STP11NK50Z 500 V < 0.52 10 A 125 W STP11NK50ZFP 500 V < 0.52 10 A 30 W s TYPICAL RDS(on) = 0.48 3 2 s EXTREMELY HIGH dv/dt CAPABILITY 1 s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED TO-220 TO-220FP s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING 3 REPEATIBILITY 1 s ADD SUFFIX "T4" FOR ORDERING IN TAPE & D2PAK REEL (D2PAK VERSION) DESCRIPTION The SuperMESHTM series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST's well established strip- based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STB11NK50ZT4 B11NK50Z D2PAK TAPE & REEL STP11NK50Z P11NK50Z TO-220 TUBE STP11NK50ZFP P11NK50ZFP TO-220FP TUBE June 2003 1/12 STP11NK50Z - STP11NK50ZFP - STB11NK50Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TO-220 / D2PAK TO-220FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k) 500 V VGS Gate- source Voltage

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