Philips pbss304nd free download

File name pbss304nd.pdf

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 -- 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PD. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I High-voltage DC-to-DC conversion I High-voltage MOSFET gate driving I High-voltage motor control I High-voltage power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter I Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V IC collector current [1] - - 3 A ICM peak collector current single pulse; - - 6 A tp 1 ms RCEsat collector-emitter IC = 2 A; [2] - 68 88 m saturation resistance IB = 200 mA [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: tp 300