LGE mmbt3906t free download

File name mmbt3906t.pdf

MMBT3906T SOT-523 Transistor (PNP) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING:3N Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -200 mA PC Collector Power Dissipation 150 mW RJA Thermal Resistance, Junction to Ambient 833 /W TJ Operating Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 DC current gain hFE(3) VCE=-1V,IC=-10mA 100 300 hFE(4) VCE=-1V,IC=-50mA