ST stv250n55f3 free download

File name stv250n55f3.pdf

STV250N55F3 N-channel 55 V, 1.5 m, 250 A, PowerSO-10 STripFETTM Power MOSFET Features RDS(on) Type VDSS ID max 10 STV250N55F3 55 V < 2.2 m 250 A 1 Conduction losses reduced PowerSO-10 Low profile, very low parasitic inductance Application Switching applications Figure 1. Internal schematic diagram and Description connection diagram (top view) This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "single feature size" strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STV250N55F3 250N55F3 PowerSO-10 Tape and reel March 2009 Rev 4 1/12 www.st.com 12 Contents STV250N55F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STV250N55F3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 55 V VGS Gate-source voltage