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BDX53BFI BDX54BFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 3 The BDX53BFI is silicon epitaxial-base NPN 2 1 power transistor in monolithic Darlington configuration and are mounted in ISOWATT220 plastic package. It is intented for use in hammer ISOWATT220 drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP type is the BDX54BFI. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BDX53BFI PNP BDX54BFI V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-base Voltage (I C = 0) 5 V IC Collector Current 8 A I CM Collector Peak Current (repetitive) 12 A IB Base Current 0.2 A P t ot Total Dissipation at T c 25 o C 30 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative. May 1997 1/4 BDX53BFP / BDX54BFP THERMAL DATA o R t hj-ca se Thermal Resistance Junction-ca