LGE mjd3055 free download

File name mjd3055.pdf

MJD3055(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. DC current gain specified to10 Amperes TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation 1.25 W Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA,IE=0 70 V Collector-emitter breakdown voltage V(BR)CEO Ic=200 mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V ICBO VCB=70V,IE=0 0.02 mA Collector cut-off current ICEO VCB=30V,IB=0 50