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Descr: . Electronic Components Datasheets Active components Transistors Wietron bss84.pdf
Group:Electronics > Components > Transistors
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BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: 1 3 *Low On-Resistance : 10 GATE 1 *Low Input Capacitance: 30PF 2 *Low Out put Capacitance : 10PF 2 *Low Threshole : 2.0V SOURCE *Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unite Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGS + -20 V Continuous Drain Current (TA=25 C) ID 130 mA Pulsed Drain Current(tp 10us) IDM 520 mA Power Dissipation (TA=25 C) PD 225 mW Maximax Junction-to-Ambient R JA 556 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking BSS84=PD WEITRON http://www.weitron.com.tw BSS84 Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage V(BR)DSS V VGS=0V, ID=250 uA 50 - - Gate-Source Threshold Voltage VGS (th) VDS=VGS, ID=1.0 mA 0.8 - 2.0 V Gate-Source Leakage Current IGSS + uA + VDS=0V, VGS=-20V - - -60 Zero Gate Voltage Drain Current VDS=25V, VGS=0V IDSS - - 0.1 uA VDS=50V, VGS=0V 15 Drain-Source On-Resistance VGS=5.0V, ID=100mA rDS (on) - 5.0 10 Forwar

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