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File name am0912-080.pdf

AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . . METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE BRANDING AM0912-080 0912-80 PIN CONNECTION DESCRIPTION The AM0912-080 Avionics power transistor is a broadband, high peak pulse power device speci- fically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specialized ap- plications including JTIDS where reduced power provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0 912-08 0 is ho used in the unique 1. Collector 3. Emitter AMPACTM Hermetic Metal/Ceramic package with 2. Base 4. Base internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25