Philips pbss305nx free download

File name pbss305nx.pdf

PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor Rev. 02 -- 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PX. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V IC collector current - - 4.6 A ICM peak collector current single pulse; - - 9.2 A tp 1 ms RCEsat collector-emitter saturation IC = 4 A; [1] - 38 53 m resistance IB = 200 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 emitter 2 2 collector 3 base 3 1 3 2 1 sym042 3. Ordering information