Philips pbss4021sp free download

File name pbss4021sp.pdf

PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 -- 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP NXP Name complement complement PBSS4021SP SOT96-1 SO8 PBSS4021SN PBSS4021SPN 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -20 V IC collector current - - -6.3 A ICM peak collector current single pulse; - - -15 A tp 1 ms RCEsat collector-emitter IC = -5 A; IB = -0.5 A [1] - 36 54 m saturation resistance [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 8 5 8 7 6 5 2 base TR1 3