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2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 600 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 6 A ICM Collector current peak value - 12 A Ptot Total power dissipation Tmb 25 - 25 W VCEsat Collector-emitter saturation voltage IC = 4.0A; IB = 0.04A - 2.0 V Icsat Collector saturation current f=16KHZ A VF Diode forward voltage IF=3A 2.5 5 V tf Fall time IC=4.0A,IB1=-IB2=0.04A,VCC=100V 6.0 s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 600 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 6 A ICM Collector current peak value - 12 A IB Base current (DC) - 1 A IBM Base current peak value - 2 A Ptot Total power dissipation Tmb 25 - 25 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT ICE Collector cut-off current VEB=0V,VCE=VCESMmax