ST stf11n65k3 free download

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STF11N65K3 N-channel 650 V, 0.765 , 11 A, TO-220FP SuperMESH3TM Power MOSFET Features RDS(on) Type VDSS ID Pw max STF10N65K3 650 V < 0.85 11 A 35 W 100% avalanche tested Extremely high dv/dt capability 2 3 1 Gate charge minimized TO-220FP Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Application Figure 1. Internal schematic diagram Switching applications D(2) Description These devices are made using the SuperMESH3TM Power MOSFET technology that G(1) is obtained via improvements applied to STMicroelectronics' SuperMESHTM technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF10N65K3 10N65K3 TO-220FP Tube September 2010 Doc ID 17931 Rev 1 1/13 www.st.com 13 Contents STF11N65K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID