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BUV298V NPN TRANSISTOR POWER MODULE s NPN TRANSISTOR s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ISOLATED CASE (2500V RMS) s EASY TO MOUNT s LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: Pin 4 not con nected s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CEV Collector-Emitter Voltage (V BE = -5 V) 1000 V V CEO(sus) Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 50 A I CM Collector Peak Current (tp = 10 ms) 75 A IB Base Current 10 A I BM Base Peak Current (t p = 10 ms) 16 A P t ot Total Dissipation at T c = 25 o C 250 W o T stg St orage Temperature -55 to 150 C o Tj Max. Operating Junction Temperature 150 C V ISO Insulation W ithstand Voltage (AC-RMS) 2500 V June 1997 1/7 BUV298V THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 0.5 C/W R thc -h Thermal Resistance Case-heats ink With Conductive o Grease Applied Max 0.05 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CER Collector Cut-off V CE = V CEV 0.4 mA o Current