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BUX98AP HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s HIGH FREQUENCY AND EFFICENCY CONVERTERS 3 s LINEAR AND SWITCHING INDUSTRIAL 2 1 EQUIPMENT DESCRIPTION TO-218 (SOT-93) The BUX98AP is a silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic package, intended for use in industrial applications from single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CER Collector-Emitter Voltage (R BE = 10 ) 1000 V V CES Collector-Base Voltage (V BE = 0) 1000 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 24 A I CM Collector Peak Current (tp < 5 ms) 36 A IB Base Current 5 A I BM Base Peak Current (t p < 5 ms) 8 A P tot Total Power Dissipation at T case < 25 o C 200 W o T stg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C June 1997 1/4 BUX98AP THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 0.63 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off V CE = V CES 1