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Descr: . Electronic Components Datasheets Active components Transistors ST stp11nk40z.pdf
Group:Electronics > Components > Transistors
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STP11NK40Z - STP11NK40ZFP STB11NK40Z N-CHANNEL 400V - 0.49 - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESHTMPower MOSFET TYPE VDSS RDS(on) ID Pw STP11NK40Z 400 V < 0.55 9A 110 W STP11NK40ZFP 400 V < 0.55 9A 30 W STB11NK40Z 400 V < 0.55 9A 110 W s TYPICAL RDS(on) = 0.49 3 2 s EXTREMELY HIGH dv/dt CAPABILITY 1 s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED TO-220 TO-220FP s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY 3 1 D2PAK DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip- based PowerMESHTM layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP11NK40Z P11NK40Z TO-220 TUBE STP11NK40ZFP P11NK40ZFP TO-220FP TUBE STB11NK40ZT4 B11NK40Z D2PAK TAPE & REEL April 2003 1/12 STP11NK40Z - STP11NK40ZFP - STB11NK40Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP11NK40Z STP11NK40ZFP STB11NK40Z VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain-gate Voltage (RGS = 20 k) 400 V VGS Gate- source Voltage

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