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STS1NC60 N-CHANNEL 600V - 12 - 0.3A - SO-8 PowerMESHTMII MOSFET TYPE VDSS RDS(on) ID STS1NC60 600 V < 15 0.3 A s TYPICAL RDS(on) = 12 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION SO-8 The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage